LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS
LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS
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DOI：
10.1103/physrevlett.39.635
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发表时间：
1977-01-01
影响因子：
8.6
通讯作者：
LOGAN, RA
中科院分区：
文献类型：
--
作者：
LANG, DV;LOGAN, RA
基于某些缺陷中心的电子和振动系统之间的极强耦合，提出了一个新的模型来解释在某些化合物半导体中观察到的持久光导现象。模型得到了n型AlxGa1−xAs中与施主有关的缺陷数据的支持，这些缺陷表现出这种效应的特征：非常大的斯托克斯位移(热深度，∼0.1 eV；光学厚度，∼1.2 eV)；以及在77K以下的非常小的(<；10−30 cm2)热激活电子俘获截面。
A new model, based on an extremely strong coupling between the electronic and vibrational systems of certain defect centers, is proposed to explain the phenomenon of persistent photoconductivity observed in some compound semiconductors. The model is supported by data on donor-related defects in n-type Al x Ga 1− x As which exhibit the features characteristic of this effect: a very large Stokes shift (thermal depth,∼ 0.1 eV; optical depth,∼ 1.2 eV); and a very small (< 10− 30 cm 2), thermally activated, electron-capture cross section at temperatures below 77 K.