Determination of lattice parameter and of N lattice location in InxGa1−xNyAs1−y/GaAs and GaNyAs1−y/GaAs epilayers
Determination of lattice parameter and of N lattice location in InxGa1−xNyAs1−y/GaAs and GaNyAs1−y/GaAs epilayers
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InxGa1−xNyAs1−y/GaAs 和 GaNyAs1−y/GaAs 外延层中晶格参数和 N 晶格位置的确定
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
H. Mariette
中科院分区：
文献类型：
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作者：
G. Bisognin;D. Salvador;C. Mattevi;M. Berti;A. Drigo;G. Ciatto;L. Grenouillet;P. Duvaut;P. Gilet;H. Mariette
我们使用了一种实验策略，将核反应分析和卢瑟福背散射光谱法结合在随机和沟道几何中，可以精确定量InxGa 1 − xNyAs 1 −y/GaAs和GaNyAs 1 −y/GaAs外延系统中的N总量（0.038<x<0.044，0.015<y<0.045），以及氮原子在晶格中的精确定位。所有的N原子被发现的取代位置。然后利用这些信息来关联的高分辨率的X-射线衍射得到的外延层的弛豫晶格参数的N浓度，通过考虑到弹性理论，允许在整个范围内的两种合金的调查N浓度的Vegard规则的有效性的验证。已被发现是相同的三元和四元合金的晶格参数上的N掺入的效果。
We have used an experimental strategy that, combining nuclear reaction analysis and Rutherford backscattering spectrometry both in random and channeling geometry, allowed an accurate quantification of the total amount of N in InxGa1−xNyAs1−y/GaAs and GaNyAs1−y/GaAs epitaxial systems (0.038<x<0.044, 0.015<y<0.045), and a precise localization of nitrogen atoms into the lattice. All N atoms were found on substitutional positions. This information was then exploited to correlate the relaxed lattice parameter of the epilayers obtained by high-resolution x-ray diffraction to the N concentration, by taking into account the elasticity theory, allowing a verification of the validity of Vegard’s rule in the whole range of investigated N concentrations for both alloys. The effect of N incorporation on the lattice parameter has been found to be the same both for ternary and quaternary alloys.