Electric Resistivity Measurements of Sb2Te3 and Ge2Sb2Te5 Melts Using Four-Terminal Method
Electric Resistivity Measurements of Sb2Te3 and Ge2Sb2Te5 Melts Using Four-Terminal Method
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DOI：
10.1143/jjap.49.065802
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发表时间：
2010-06-01
影响因子：
1.5
通讯作者：
Susa, Masahiro
中科院分区：
文献类型：
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作者：
Endo, Rie;Maeda, Shimpei;Susa, Masahiro
在这项工作中，我们的目标是确定液体Sb_2Te_3和Ge_2Sb_2Te_5的电导率。使用四端法测量电介电常数。首先，测量了液体Ga和Sn的电导率以建立该方法。其次，在从样品的各自熔化温度到1020 K的温度范围内测量Sb2Te3和Ge 1.6Sb2.0Te5.0的电阻率。Sb_2Te_3的电阻率在992 K时为4.36 ± 0.14 μ Ω·m。根据测量不确定度表示指南确定不确定度。Ge 1.6Sb 2.0Te 5.0的电阻率小于Sb 2Te 3。它还发现，这两个折射率随温度的升高而降低，这表明这两种液体材料的行为作为一个半导体。因此，赝能隙模型被应用到推导的电激活能。(C)2010日本应用物理学会
In this work, we aim to determine the electric resistivities of liquid Sb2Te3 and Ge2Sb2Te5. Electric resistivities were measured using the four-terminal method. First, the electric resistivities of liquid Ga and Sn were measured to establish this method. Second, the electric resistivities of Sb2Te3 and Ge1.6Sb2.0Te5.0 were measured over temperature ranges between the respective melting temperatures of samples and 1020 K. The electric resistivity of Sb2Te3 has been determined to be 4.36 +/- 0.14 mu Omega m at 992 K. The uncertainty was determined on the basis of the guide to the expression of uncertainty in measurement. The electric resistivity of Ge1.6Sb2.0Te5.0 is smaller than that of Sb2Te3. It is also found that both resistivities decrease with an increase in temperature; which indicates that both liquid materials behave as a semiconductor. Therefore, the pseudogap model was applied to derive the electrical activation energies. (C) 2010 The Japan Society of Applied Physics