Kondo lattice effects and the collapse of lattice coherence in Yb 1-x Lu x B 12 studied by hard x-ray photoelectron spectroscopy
Kondo lattice effects and the collapse of lattice coherence in Yb 1-x Lu x B 12 studied by hard x-ray photoelectron spectroscopy
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硬X射线光电子能谱研究Yb 1-x Lu x B 12 中的近藤晶格效应和晶格相干性崩溃
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
S. Suga
中科院分区：
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作者：
J. Yamaguchi;A. Sekiyama;S. Imada;H. Fujiwara;M. Yano;T. Miyamachi;G. Funabashi;M. Obara;A. Higashiya;K. Tamasaku;M. Yabashi;T. Ishikawa;F. Iga;T. Takabatake;S. Suga
用体敏硬x射线h8keV光电子能谱研究了YbB12和Lu取代的Yb1�xLUXB12 x=1/8合金在200~20K温度范围内的体感应态。为了检验体电子态的近藤晶格效应，用考虑晶态电场效应的单杂质Anderson模型分析了这两个系统中Yb体的价态和4f峰位随温度的变化。当x=0时，体电子态的温度依赖关系不能在SIAM中得到解释，而当x=1/8时，由于Lu取代导致晶格相干性崩塌，SIAM的预测可以解释。这些结果表明，近藤晶格效应对于纯YbB12来说是重要的，并且对于在低温下形成窄禁带起着重要的作用。
Kondo semiconductor YbB12 and the Lu-substituted Yb1�xLuxB12 x =1 / 8 alloy have been studied by the bulk-sensitive hard x-ray h 8 keV photoelectron spectroscopy at temperatures from 200 down to 20 K. To check the Kondo lattice effects for the bulk electronic states, the temperature dependence of the bulk Yb valence and 4f peak positions in both systems is analyzed with use of the single-impurity Anderson model SIAM by considering the crystalline electric field effects. For x = 0, the temperature dependence of the bulk electronic states cannot be interpreted within the SIAM, whereas those for x =1 / 8 could be understood by the SIAM predictions due to the collapse of the lattice coherence by the Lu substitution. These results indicate that the Kondo lattice effects are important for pure YbB12 and play essential roles for forming a narrow gap at low temperatures.