Lasing at three-dimensionally quantum-confined sublevel of self-organized In/sub 0.5/Ga/sub 0.5/As quantum dots by current injection

Lasing at three-dimensionally quantum-confined sublevel of self-organized In/sub 0.5/Ga/sub 0.5/As quantum dots by current injection
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通过电流注入在自组织 In/sub 0.5/Ga/sub 0.5/As 量子点的三维量子限制子能级上发射激光

DOI:
10.1109/68.477257
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发表时间:
1995
影响因子:
2.6
通讯作者:
H. Ishikawa
H. Ishikawa
中科院分区:
工程技术3区
文献类型:
--
作者:
H. Shoji;K. Mukai;N. Ohtsuka;M. Sugawara;T. Uchida;H. Ishikawa

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在80K下,通过电流注入实现了自组织In/sub0.5/Ga/sub0.5/As量子点的激光振荡。通过电致发光和反磁能移测量,首次清楚地证明了In/sub0.5/Ga/sub0.5/As量子点的三维量子限制子能级的激光效应。预测了量子点激光器实现超低阈值电流运转的可能性。
A laser oscillation from self-organized In/sub 0.5/Ga/sub 0.5/As quantum dots is achieved at 80 K by current injection. Lasing at a three-dimensionally quantum confined sublevel of the In/sub 0.5/Ga/sub 0.5/As quantum dots is clearly demonstrated for the first time by electroluminescence and diamagnetic energy shift measurement. The results predict the possibility of ultra-low threshold current operation of quantum dot lasers.
DOI: 10.1063/1.110199
发表时间: 1993-12-06
影响因子: 4
作者:
LEONARD, D;KRISHNAMURTHY, M;PETROFF, PM
通讯作者: PETROFF, PM
DOI: 10.1063/1.92959
发表时间: 1982-01-01
影响因子: 4
作者:
ARAKAWA, Y;SAKAKI, H
通讯作者: SAKAKI, H