Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices
Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices
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DOI：
10.1021/nl034003w
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发表时间：
2003-02
期刊：
影响因子：
10.8
通讯作者：
Z. Zhong;Fang Qian;Deli Wang;Charles M. Lieber
中科院分区：
文献类型：
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作者：
Z. Zhong;Fang Qian;Deli Wang;Charles M. Lieber
采用金属催化化学气相沉积法制备了掺镁氮化镓纳米线。在c-平面蓝宝石衬底上制备的纳米线被发现垂直于衬底生长，透射电子显微镜研究表明，纳米线具有单晶结构，具有与衬底外延一致的10001 nm生长轴。个别镁掺杂氮化镓纳米线配置为场效应晶体管表现出系统的变化，在两端电阻作为镁掺杂剂掺入的函数，和栅极依赖的电导测量表明，最佳掺杂的纳米线是p型的空穴迁移率约。12 cm 2/V s。此外，由p型和n型材料组装的交叉氮化镓纳米线结构的输运研究表明，这些结对应于定义良好的p-n二极管。在正向偏压下，p-n交叉纳米线结还用作纳米级UV-蓝光发光二极管。p型氮化镓纳米线构建块的新合成为纳米级电子学和光子学的组装开辟了巨大的潜力。半导体纳米线（NW）已经显示出作为纳米电子和纳米光子器件的基本构建块的显著潜力，并且还提供实质性的应用。
Magnesium-doped gallium nitride nanowires have been synthesized via metal-catalyzed chemical vapor deposition. Nanowires prepared on c-plane sapphire substrates were found to grow normal to the substrate, and transmission electron microscopy studies demonstrated that the nanowires had single-crystal structures with a 〈0001〉 growth axis that is consistent with substrate epitaxy. Individual magnesium-doped gallium nitride nanowires configured as field-effect transistors exhibited systematic variations in two-terminal resistance as a function of magnesium dopant incorporation, and gate-dependent conductance measurements demonstrated that optimally doped nanowires were p-type with hole mobilities of ca. 12 cm2/V‚s. In addition, transport studies of crossed gallium nitride nanowire structures assembled from p- and n-type materials show that these junctions correspond to well-defined p-n diodes. In forward bias, the p-n crossed nanowire junctions also function as nanoscale UV-blue light emitting diodes. The new synthesis of p-type gallium nitride nanowire building blocks opens up significant potential for the assembly of nanoscale electronics and photonics. Semiconductor nanowires (NWs) have demonstrated significant potential as fundamental building blocks for nanoelectronic and nanophotonic devices and also offer substantial