Real-Time Plasma Uniformity Monitoring via Selective Plasma Light Intensity Measurement Using Transparent-LCD-Module-Adapted Optical Emission Spectroscopy
Real-Time Plasma Uniformity Monitoring via Selective Plasma Light Intensity Measurement Using Transparent-LCD-Module-Adapted Optical Emission Spectroscopy
复制标题
使用透明 LCD 模块适配的发射光谱通过选择性等离子体光强度测量进行实时等离子体均匀性监测
DOI：
10.1109/jsen.2020.3017506
复制
发表时间：
2021
影响因子：
4.3
通讯作者：
I. Yun
中科院分区：
文献类型：
--
作者：
In Joong Kim;Chuntaek Park;Dongseok Shin;I. Yun
提出了一种基于光学发射光谱（OES）的等离子体光强实时选择性测量技术，用于半导体加工过程中等离子体各区域的工艺均匀性监测和检测。在等离子体诊断技术中，OES是一种用于工艺终点和等离子体异常检测的非接触式等离子体测量技术，不会造成任何工艺损害。因此，它主要用于所有基于等离子体的工具。然而，传统的OES系统不能在特定的OES采样时间进行实时等离子体均匀性检测，因此，需要对其进行改进。在这项研究中，我们表明，选择性的等离子体光强度，包括那些在工艺室的左侧和右侧，可以测量与液晶显示模块适应传统的OES确定工艺均匀性。所提出的技术可以用于测量在工艺室的特定区域中的选择性等离子体光强度，例如晶片的中心和边缘区域，并且由此分析等离子体工艺均匀性。
A real-time selective plasma light intensity measurement technique involving optical emission spectroscopy (OES) is proposed for process uniformity monitoring and detection in various plasma regions during semiconductor processing. Among plasma diagnostic techniques, OES is a noncontact plasma measurement technique for process end point and plasma abnormality detection that does not cause any process damage. Therefore, it is mostly used in all plasma-based tools. However, conventional OES systems are incapable of real-time plasma uniformity detection at specific OES sampling times, and therefore, there is a need for improving them. In this study, we show that selective plasma light intensity, including those on the left and right sides of a process chamber, can be measured with transparent-LCD-module-adapted conventional OES for determining process uniformity. The proposed technique can be used to measure the selective plasma light intensity in specific regions of the process chamber, such as the center and edge regions of a wafer, and to thereby analyze the plasma process uniformity.