MoS2 Nanoribbon Transistors: Transition From Depletion Mode to Enhancement Mode by Channel-Width Trimming
MoS2 Nanoribbon Transistors: Transition From Depletion Mode to Enhancement Mode by Channel-Width Trimming
复制标题
DOI：
10.1109/led.2012.2202630
复制
发表时间：
2012-09-01
影响因子：
4.9
通讯作者：
Ye, Peide D.
中科院分区：
文献类型：
--
作者：
Liu, Han;Gu, Jiangjiang;Ye, Peide D.
我们研究了背门控MoS2金属氧化物半导体场效应晶体管的沟道宽度从2 μ m减小到60 nm。我们发现，沟道电导与沟道宽度呈线性关系，表明等离子体干刻蚀定义的宽度小于60 nm的MoS2纳米带没有明显的边缘损伤。然而，这些晶体管显示出强烈的正阈值电压（V-T）移位，通道宽度小于200nm。我们的研究结果还表明，沟道厚度越薄的晶体管与宽度缩放相关的V-T位移越大。在6纳米厚的二硫化钼晶体上制备的器件经历了从耗尽模式到增强模式的转变。
We study the channel width scaling of back-gated MoS2 metal-oxide-semiconductor field-effect transistors from 2 mu m down to 60 nm. We reveal that the channel conductance scales linearly with channel width, indicating no evident edge damage for MoS2 nanoribbons with widths down to 60 nm as defined by plasma dry etching. However, these transistors show a strong positive threshold voltage (V-T) shift with narrow channel widths of less than 200 nm. Our results also show that transistors with thinner channel thicknesses have larger V-T shifts associated with width scaling. Devices fabricated on a 6-nm-thick MoS2 crystal underwent the transition from depletion mode to enhancement mode.