New techniques for fabricating step-edge junctions for high-T/sub c/ SQUIDs on MgO substrates
New techniques for fabricating step-edge junctions for high-T/sub c/ SQUIDs on MgO substrates
复制标题
在 MgO 基底上制造高 T/sub c/SQUID 阶梯边缘结的新技术
DOI：
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发表时间：
1993
影响因子：
1.8
通讯作者：
G. Sloggett
中科院分区：
文献类型：
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作者：
C. Foley;D. L. Dart;A. Katsaros;N. Savvides;M. James;J. Macfarlane;N. Scheepers;G. Sloggett
作者描述了两种在适合超导量子干涉器件(SQUID)的氧化镁衬底上产生台阶结的方法。在这两个过程中，都使用了钛掩模来产生直接、明确的步骤，这有助于将多个接合点的出现降至最低。他们描述了两种离子研磨工艺，它们产生了扫描电子显微镜(SEM)显微照片以及I-V和I/B C/-B特性所示的不同连接的台阶边缘结。证明了薄膜厚度与台阶高度的比率与结的临界电流密度之间的可预测关系；这使得对于特定的SQUID设计，能够创建具有适当的I/SUB C/值的台阶-边缘结。
The authors describe two methods used to produce step-edge junctions on MgO substrates suitable for superconducting quantum interference devices (SQUIDs). In both processes a titanium mask has been used to produce a straight, well-defined step which assists in minimizing the occurrence of multiple junctions. They describe two ion-milling processes which produce differently connected step-edge junctions as indicated by scanning electron microscope (SEM) micrographs, and I-V and I/sub C/-B characteristics. Predictable relationships between the ratio of the film thickness to step height and the junction critical-current density are demonstrated; these enable the creation of step-edge junctions with appropriate values of I/sub C/ for particular SQUID designs.<<ETX>>