RF MEMS switches with enhanced power-handling capabilities
RF MEMS switches with enhanced power-handling capabilities
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DOI：
10.1109/tmtt.2003.821234
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发表时间：
2004-01-01
影响因子：
4.3
通讯作者：
Katehi, LPB
中科院分区：
文献类型：
--
作者：
Peroulis, D;Pacheco, SP;Katehi, LPB
本文报道了高功率应用的RF微机电系统（MEMS）开关的实验和理论表征。首先，我们调查的问题，自致动由于高RF功率，我们展示了开关，不自致动或灾难性的失败与测得的RF功率高达5.5 W。其次，还从理论和实验上研究了开关到向下状态的粘滞力与所施加的RF功率的函数关系问题。最后，一种新型的开关设计与顶部电极的介绍和其优势有关的RF功率处理能力。通过应用该技术，我们演示了最大功率为0.8 W的热开关测量。我们的研究结果，理论和测量的支持下，说明精心设计可以显着提高RF MEMS开关的功率处理能力。
This paper reports on the experimental and theoretical characterization of RF microelectromechanical systems (MEMS) switches for high-power applications. First, we investigate the problem of self-actuation due to high RF power and we demonstrate switches that do not self-actuate or catastrophically fail with a measured RF power of up to 5.5 W. Second, the problem of switch stiction to the down state as a function of the applied RF power is also theoretically and experimentally studied. Finally, a novel switch design with a top electrode is introduced and its advantages related to RF power-handling capabilities are presented. By applying this technology, we demonstrate hot-switching measurements with a maximum power of 0.8 W. Our results, backed by theory and measurements, illustrate that careful design can significantly improve the power-handling capabilities of RF MEMS switches.