Preparation of Multielements Mixture Thin Film by One-Step Process Sputtering Deposition Using Mixture Powder Target

Preparation of Multielements Mixture Thin Film by One-Step Process Sputtering Deposition Using Mixture Powder Target
复制标题

混合粉末靶材一步法溅射沉积制备多元混合薄膜

DOI:
10.1109/tps.2020.3025306
复制
发表时间:
2020
影响因子:
1.5
通讯作者:
Yoshiaki Suda
Yoshiaki Suda
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Hiroharu Kawasaki;Tamiko Ohshima;Yoshihito Yagyu;Takeshi Ihara;Yoshiaki Suda

文献摘要

相似文献

制备由铟、镓、锌和氧的混合物组成的薄膜,用作液晶和/或电致发光显示器的透明导电膜。通过使用具有不同比例的氧化铟、氧化镓和氧化锌的混合粉末靶的溅射沉积方法在一个步骤中生产薄膜。薄膜的沉积速率强烈依赖于靶的成分。X射线光电子能谱结果表明,混合铟,镓,锌,氧薄膜可以制备和它们的元素浓度比控制的粉末靶的浓度比。
Thin films consisting of a mixture of indium, gallium, zinc, and oxygen were fabricated for use as transparent conductive films for liquid crystal and/or electroluminescent displays. The thin films were produced in one step by a sputtering deposition method using mixed powder targets with different proportions of indium oxide, gallium oxide, and zinc oxide. The deposition rate of the films strongly depended on the composition of the target. X-ray photoelectron spectroscopy results revealed that mixed indium, gallium, zinc, and oxygen thin films can be prepared and their element concentration ratio is controlled by the concentration ratio of the powder target.