Gallium nitride phononic integrated circuits platform for GHz frequency acoustic wave devices
Gallium nitride phononic integrated circuits platform for GHz frequency acoustic wave devices
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DOI：
10.1063/5.0082467
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发表时间：
2022-06-13
影响因子：
4
通讯作者：
C. Balram, Krishna
中科院分区：
文献类型：
--
作者：
Bicer, Mahmut;Valle, Stefano;C. Balram, Krishna
高频声音的强横向限制和片上波导中的低损耗路由将为操纵GHz频率声波带来新的自由度，类似于硅集成光子学对芯片上光的路由和操纵所带来的变化。在这里，我们证明，高频（> 3 GHz）的声音可以有效地引导微米级氮化镓（GaN）波导和环形谐振器，通过利用碳化硅（SiC）平台上的GaN中的强速度对比。鉴于GaN器件在RF放大器中的既定用途，我们的工作开辟了在同一芯片上构建有源和无源元件之间紧密集成的RF器件的可能性。由AIP Publishing独家授权出版。
Strong transverse confinement of high-frequency sound and low-loss routing in on-chip waveguides will bring new degrees of freedom to manipulate GHz frequency acoustic waves, analogous to the change brought forth by silicon integrated photonics to the routing and manipulation of light on a chip. Here, we demonstrate that high frequency (> 3 GHz) sound can be efficiently guided in mu m-scale gallium nitride (GaN) waveguides and ring resonators by exploiting the strong velocity contrast available in the GaN on silicon carbide (SiC) platform. Given the established use of GaN devices in RF amplifiers, our work opens up the possibility of building RF devices with tight integration between the active and passive components on the same die. Published under an exclusive license by AIP Publishing.