High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets
High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets
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用于快速芯片组的蓝宝石衬底上的高电子迁移率 SiGe
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
Sang H. Choi
中科院分区：
文献类型：
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作者：
Hyunjung Kim;Yeonjoon Park;H. Bae;Sang H. Choi
具有低孪晶缺陷密度、高电子迁移率和光滑表面的高质量应变松弛 SiGe 薄膜对于器件制造实现设计性能至关重要。由于锗的高载流子迁移率，SiGe的迁移率可以比硅高几倍（1016时p型Si：430 cm2/V·s，p型Ge：2200 cm2/V·s，n型Si：1300 cm2/V·s，n型Ge：3000 cm2/V·s）每cm3掺杂密度）。因此，采用菱面体 SiGe 平面蓝宝石制成的射频器件的运行速度可能比 SOS 晶圆上的射频器件快几倍。 NASA 兰利利用蓝宝石基面方向上立方 SiGe 方向的原子排列，成功生长了高度有序的单晶菱面体外延。几个菱面体生长的 SiGe 平面蓝宝石样品显示出超过 95% 至 99.5% 的高单晶百分比。测试样品的电子迁移率介于单晶Si和Ge之间。 95%单晶SiGe的测量电子迁移率为1538cm2/V·s，在6×1017/cm3掺杂浓度下，其电子迁移率在350cm2/V·s（Si）和1550cm2/V·s（Ge）之间。
High-quality strain-relaxed SiGe films with a low twin defect density, high electron mobility, and smooth surface are critical for device fabrication to achieve designed performance. The mobilities of SiGe can be a few times higher than those of silicon due to the content of high carrier mobilities of germanium (p-type Si: 430 cm2/V·s, p-type Ge: 2200 cm2/V·s, n-type Si: 1300 cm2/V·s, and n-type Ge: 3000 cm2/V·s at 1016 per cm3 doping density). Therefore, radio frequency devices which are made with rhombohedral SiGe on -plane sapphire can potentially run a few times faster than RF devices on SOS wafers. NASA Langley has successfully grown highly ordered single crystal rhombohedral epitaxy using an atomic alignment of the direction of cubic SiGe on top of the direction of the sapphire basal plane. Several samples of rhombohedrally grown SiGe on -plane sapphire show high percentage of a single crystalline over 95% to 99.5%. The electron mobilities of the tested samples are between those of single crystals Si and Ge. The measured electron mobility of 95% single crystal SiGe was 1538 cm2/V·s which is between 350 cm2/V·s (Si) and 1550 cm2/V·s (Ge) at 6 × 1017/cm3 doping concentration.