Low Temperature Chemical Vapor Deposition of 3C-SiC on Si Substrates
Low Temperature Chemical Vapor Deposition of 3C-SiC on Si Substrates
复制标题
硅基片上 3C-SiC 的低温化学气相沉积
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
J. Pezoldt
中科院分区：
文献类型：
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作者：
C. Förster;V. Cimalla;O. Ambacher;J. Pezoldt
在目前的工作中，开发了一种 UHVCVD 方法，该方法允许在低于 1000°C 的温度下在 Si 衬底上外延生长 3C-SiC。所开发的方法能够在 Si 上生长低应力或几乎无应力的单晶 3C-SiC 层。讨论了氢气对生长过程的影响。利用反射高能衍射、原子力显微镜、X射线衍射研究了3C-SiC(100)层的结构性能，并利用反射计和可见光椭圆光度法测量了层厚度。通过观察独立式 SiC 悬臂梁，证明了优化生长温度下拉伸应变的降低、气相中的 Si/C 比和沉积速率。
In the present work an UHVCVD method was developed which allows the epitaxial growth of 3C-SiC on Si substrates at temperatures below 1000°C. The developed method enable the growth of low stress or nearly stress free single crystalline 3C-SiC layers on Si. The influence of hydrogen on the growth process are be discussed. The structural properties of the 3C-SiC(100) layers were studied with reflection high-energy diffraction, atomic force microscopy, X-ray diffraction and the layer thickness were measured by reflectometry as well as visible ellipsometry. The tensile strain reduction at optimized growth temperature, Si/C ratio in the gas phase and deposition rate are demonstrated by the observation of freestanding SiC cantilevers.