Dynamics of surface electron trapping of a GaN-based transistors revealed by spatiotemporally resolved x-ray spectroscopy
Dynamics of surface electron trapping of a GaN-based transistors revealed by spatiotemporally resolved x-ray spectroscopy
复制标题
时空分辨 X 射线光谱揭示 GaN 基晶体管表面电子俘获动力学
DOI：
10.1063/5.0020500
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发表时间：
2020
影响因子：
4
通讯作者：
Fukidome Hirokazu
中科院分区：
文献类型：
--
作者：
Omika Keiichi;Takahashi Kensuke;Yasui Akira;Ohkochi Takuo;Osawa Hitoshi;Kouchi Tsuyoshi;Tateno Yasunori;Suemitsu Maki;Fukidome Hirokazu
