Microwave power SiC MESFETs and GaN HEMTs
Microwave power SiC MESFETs and GaN HEMTs
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微波功率 SiC MESFET 和 GaN HEMT
DOI：
10.1109/lechpd.2002.1146748
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
J. Tucker
中科院分区：
文献类型：
--
作者：
A. Zhang;L. Rowland;E. Kaminsky;J. Kretchmer;R. Beaupre;J. Garrett;J. Tucker
我们已经制作了SiC MESFET，从单个21.6 mm栅外围器件（2.9 W/mm）在450 MHz的输出功率超过60 W，从单个14.4 mm SiC MESFET器件（1.9 W/mm）在3 GHz的输出功率超过27 W。我们还展示了用于X波段（10 GHz）应用的400 /spl mu/m GaN/AlGaN HEMT器件的超过6.7 W/mm CW功率。这些优异的器件性能归因于改进的衬底和外延膜质量、优化的器件热管理以及增强的器件制造技术。比较了来自不同来源的衬底和外延膜，并且一些显示出通过X射线形貌术确认的显著较少的SiC衬底微管和通过光学缺陷映射表征的外延缺陷。
We have fabricated SiC MESFETs with more than 60 W of output power at 450 MHz from single 21.6 mm gate periphery devices (2.9 W/mm) and 27 W of output power at 3 GHz from single 14.4 mm SiC MESFET devices (1.9 W/mm). We have also demonstrated more than 6.7 W/mm CW power from 400 /spl mu/m GaN/AlGaN HEMT devices for X band (10 GHz) applications. These excellent device performances have been attributed to the improved substrate and epitaxial film quality, optimized device thermal management, and enhanced device fabrication technologies. The substrates and epitaxial films from different sources were compared and some showed significant less SiC substrate micropipes confirmed by X-ray topography and epitaxial defects characterized by optical defect mapping.