Optical Resonance Coupled with Electronic Structure Engineering toward High‐Sensitivity Photodetectors
Optical Resonance Coupled with Electronic Structure Engineering toward High‐Sensitivity Photodetectors
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光学谐振与电子结构工程相结合的高灵敏度光电探测器
DOI：
10.1002/adom.202101374
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发表时间：
2021-09
期刊：
影响因子：
--
通讯作者：
Li Jingbo
中科院分区：
文献类型：
--
作者：
Yang Mengmeng;Yan Jiahao;Ma Churong;Gao Wei;Zhou Yuchen;Yao Ji;ong;Zheng Zhaoqiang;Wu Fugen;Li Jingbo
具有高响应度、高探测率和高响应速度的超灵敏光电探测器在广泛的应用中引起了迫切的需求。近年来，二维铟硫族化合物由于其优异的电学和光电性能而成为引人注目的光活性材料。然而，传统的2D铟硫属化物光电探测器由于原子级薄的厚度引起的弱光吸收以及光生载流子的短寿命，通常表现出有限的光电探测性能。在这里，一个通用的战略集成2D铟硫族化物和硅纳米条纹阵列被证明。Si纳米条提供米氏型共振，这有助于光吸收。此外，光电导增益和应变工程的引入，降低了光生载流子的寿命，加速了它们的输运。这三种机制的耦合作用使器件具有较高的光电探测性能。所构建的α-In 2Se 3器件具有9.4 × 103 A W-1的高响应率和5.5 × 1013 Jones的探测率，同时保持了2.7/3.8ms的快速上升/衰减时间，此外，该策略还可以用于构建具有全面增强光电探测性能的InSe器件，具有普遍性和广泛的适用性。这些结果表明，先进的器件设计是实现未来多功能高灵敏度光电器件的有效途径。
Ultrasensitive photodetectors with high responsivity, detectivity, and fast response rate have triggered urgent demand in extensive applications. In recent years, 2D indium chalcogenides have emerged as appealing photoactive materials due to their excellent electrical and optoelectronic properties. However, suffering from the weak optical absorption induced by atomically thin thickness as well as the short lifetime of photogenerated carriers, conventional 2D indium chalcogenides photodetectors commonly exhibit limited photodetection performance. Herein, a universal strategy integrating 2D indium chalcogenides and Si nanostripe array is demonstrated. The Si nanostripes afford Mie‐type resonance, which facilitates light absorption. In addition, the introduction of photoconductive gain and strain engineering prolongs photogenerated carriers’ lifetime and accelerates their transport. The coupling effect of these three mechanisms enables the device to exhibit high photodetection performance. The constructed α‐In2Se3 device manifests a high responsivity of 9.4 × 103 A W−1, detectivity of 5.5 × 1013 Jones while maintaining fast rise/decay time of 2.7/3.8 ms. In addition, this proposed strategy can also be employed to construct InSe device with comprehensively enhanced photodetection performance, which presents universality and wide applicability. These results demonstrate that advanced device design is an effective avenue to achieve future multifunctional optoelectronic devices with high sensitivity.
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