Incubation effect and its influence on laser patterning of ITO thin film
Incubation effect and its influence on laser patterning of ITO thin film
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DOI：
10.1007/s00339-012-6820-y
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发表时间：
2012-03
期刊：
影响因子：
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通讯作者：
Shizhou Xiao;E. Gurevich;A. Ostendorf
中科院分区：
文献类型：
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作者：
Shizhou Xiao;E. Gurevich;A. Ostendorf
结果上的ITO薄膜的表面损伤阈值诱导的单脉冲和多脉冲激光照射在10 ps的脉冲宽度和波长为1064 nm。对于多脉冲烧蚀的孵化效应的结果在降低的损伤阈值，特别是明显的在低脉冲数和非常小的膜厚度。孵化效应归因于缺陷位点的积累和/或由入射激光脉冲引起的热应力-应变能量的存储。在10-100 nm范围内，孵化系数S =0.82，与膜厚无关。在实际应用中，孵化效应决定了ITO薄膜的激光图形化结构，同时增加了脉冲重叠率。图案线的宽度可以通过所提出的模型预测，包括激光能量密度，重叠率和孵化系数。
Results are presented on the surface damage thresholds of ITO thin films induced by single- and multi-pulse laser irradiation at a pulse duration of 10 ps and a wavelength of 1064 nm. For multi-pulse ablation the incubation effect results in a reduction of the damage threshold, especially apparent at low pulse numbers and very small film thicknesses. The incubation effect attributes to the accumulation of defect sites and/or the storage of thermal stress-strain energy induced by the incident laser pulses. An incubation coefficient ofS=0.82 has been obtained which is independent on the film thickness in the range of 10–100 nm. In practical applications, the incubation effect determines the laser patterning structure of ITO films while increasing the pulse overlapping rate. The width of the patterned line can be predicted by the proposed model involving the laser fluence, the overlapping rate and the incubation coefficient.