Initial growth processes of ultra-thin Ni-layers on Si(111) and electronic structure of epitaxially grown NiSi2
Initial growth processes of ultra-thin Ni-layers on Si(111) and electronic structure of epitaxially grown NiSi2
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DOI：
10.1016/j.susc.2005.05.029
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发表时间：
2005-08
期刊：
影响因子：
1.9
通讯作者：
T. Nishimura;J. Takeda;Y. Asami;Y. Hoshino;Y. Kido
中科院分区：
文献类型：
--
作者：
T. Nishimura;J. Takeda;Y. Asami;Y. Hoshino;Y. Kido
