Study of rounded concave and sharp edge convex corners undercutting in CMOS compatible anisotropic etchants
Study of rounded concave and sharp edge convex corners undercutting in CMOS compatible anisotropic etchants
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DOI：
10.1088/0960-1317/17/11/017
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发表时间：
2007-11-01
影响因子：
2.3
通讯作者：
Shikida, Mitsuhiro
中科院分区：
文献类型：
--
作者：
Pal, Prem;Sato, Kazuo;Shikida, Mitsuhiro
在本文中，我们使用互补金属氧化物半导体（CMOS）兼容的四甲基氢氧化铵（TMAH）溶液，研究了(100)-硅晶圆的圆形凹角和尖锐凸角的切割。为了在保持合理的蚀刻速率、光滑的蚀刻表面和CMOS兼容性的同时最大限度地减少两种角型的破坏，考虑了含有100%聚氧乙烯-烷基-苯基醚的非离子表面活性剂NC-200。在60、70和80的温度下，分别用10%、20%和25%的TMAH溶液研究了浓度和蚀刻温度的影响。C.当NC-200用量为蚀刻剂总量的0.1%时，随着蚀刻剂浓度的增加，圆形凹角和尖锐凸角处的破坏比都有利地减少，同时蚀刻速率也增加。这与纯TMAH的蚀刻特性相反。此外，NC-200还改善了低浓度下的粗糙蚀刻表面形貌。
In this paper, we have studied the undercutting at rounded concave and sharp convex corners in (100)-silicon wafers using a complementary metal-oxide semiconductor (CMOS) compatible tetramethyl ammonium hydroxide ( TMAH) solution with and without surfactant. In order to minimize the undercutting at both corner types while keeping reasonable etch rates, smooth etched-surfaces and CMOS compatibility, the non-ionic surfactant NC-200 that contains 100% polyoxyethylene-alkyl-phenyl-ether is considered. The effect of concentration and etching temperature is studied using 10, 20 and 25 wt% TMAH solutions at 60, 70 and 80. C. When NC-200 at 0.1% of the total volume of the etchant is used, the undercutting ratio at both rounded concave and sharp convex corners is beneficially reduced as the etchant concentration is increased while, simultaneously, the etch rate increases. This is the opposite trend to the etch characteristics of pure TMAH. In addition, the rough etched surface morphology at low concentration is also improved by using NC-200.