Fabrication of carbon nanotube lateral field emitters
Fabrication of carbon nanotube lateral field emitters
复制标题
碳纳米管横向场发射器的制造
DOI：
10.1088/0957-4484/14/2/318
复制
发表时间：
2003
期刊：
影响因子：
3.5
通讯作者：
H. Ahmed
中科院分区：
文献类型：
--
作者：
Seung;A. S. Teh;K. Teo;M. Chhowalla;D. Hasko;W. Milne;G. Amaratunga;H. Ahmed
本文报道了碳纳米管横向场发射体的制备和场发射特性。由于其高的纵横比和机械强度，我们使用垂直排列的多壁碳纳米管制备的等离子体增强化学气相沉积作为阴极，这使得悬臂式横向场发射器的制造成为可能。发射特性表明场发射在11-17 V开始。与标准Spindt尖端相比，该器件具有高的几何增强因子（9.3 × 106 cm-1），这可能是由于纳米管尖端处的场浓度增加和阳极的紧密接近（<1μm）。与垂直场致发射体相比，相对容易的制造和观察到的增强的场致发射特性使得碳纳米管横向场致发射体成为未来集成纳米电子器件的良好候选者。
We report on the fabrication and field emission of carbon nanotube lateral field emitters. Due to its high aspect ratio and mechanical strength, we use vertically aligned multi-wall carbon nanotubes prepared by plasma-enhanced chemical vapour deposition as cathodes, which makes the fabrication of cantilever type lateral field emitters possible. The emission characteristics show that the field emission initiates at 11–17 V. The device has high geometrical enhancement factors (9.3 × 106 cm−1) compared to standard Spindt tips, which may be due to increased field concentration at the nanotube tip and the close proximity of the anode (<1μm). The relative ease of fabrication compared to vertical field emitters and enhanced field emission characteristics observed makes the carbon nanotube lateral field emitter a good candidate for future integrated nano-electronic devices.