Determination of Gallium Concentration in Silicon from Low-Temperature Photoluminescence Analysis
Determination of Gallium Concentration in Silicon from Low-Temperature Photoluminescence Analysis
复制标题
低温光致发光分析测定硅中镓浓度
DOI：
10.1002/solr.202300956
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发表时间：
2024
期刊：
影响因子：
7.9
通讯作者：
Abdul Fattah T
中科院分区：
文献类型：
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作者：
Abdul Fattah T
增加对当今用于制造p型硅太阳能电池的硅（Si）中镓（Ga）电子性质的了解具有关键的技术重要性。在这篇文章中，报道了Ga浓度对晶体Si中低温光致发光（PL）光谱的影响的结果。所研究的Ga掺杂的Si样品具有可忽略的硼浓度，这可以使束缚激子（BE）线的光谱分析复杂化。分析了T = 10 K时分裂的GaBE基态，并比较了BE与自由激子峰的PL强度比。通过将这些与来自电容-电压测量的已知Ga浓度进行比较，建立了用于量化Si中Ga浓度的全光学（PL）校准曲线。研究了温度和激发功率对发光强度比的影响。通过将温度引起的PL强度比的变化与10 K下的校准曲线相结合，已经确定了校准函数。结果发现，作为激发功率的函数的PL强度比的衰减率是独立的选择（分裂）BE峰。这种方法的主要优点和它的局限性进行了讨论。
Increasing the understanding of the electronic properties of gallium (Ga) in silicon (Si) used nowadays to manufacture p‐type Si solar cells is of key technological importance. In this contribution, the results of the effect of Ga concentration on the low‐temperature photoluminescence (PL) spectra in crystalline Si are reported. The Ga‐doped Si samples studied have negligible boron concentrations, which can complicate spectral analysis of the bound exciton (BE) lines. The split Ga BE ground state atT= 10 K is analyzed and the PL intensity ratios for the BE to free exciton peaks are compared. By comparing these to known Ga concentrations, derived from capacitance–voltage measurements, an all‐optical (PL) calibration curve for the quantification of Ga concentration in Si is established. The effects of both temperature and excitation power on the PL intensity ratios are also studied. By combining the temperature‐induced changes in the PL intensity ratios with the calibration curve at 10 K, a calibration function has been determined. It is found that the decay rates of the PL intensity ratios as a function of excitation power are independent of the chosen (split) BE peak. The major benefits of this method and its limitations are discussed.