Insitu CCVD grown bilayer graphene transistors for applications in nanoelectronics
Insitu CCVD grown bilayer graphene transistors for applications in nanoelectronics
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DOI：
10.1016/j.apsusc.2013.09.142
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发表时间：
2014-02
影响因子：
6.7
通讯作者：
P. Wessely;U. Schwalke
中科院分区：
文献类型：
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作者：
P. Wessely;U. Schwalke
我们发明了一种在硅CMOS兼容工艺中在氧化硅晶片上制造石墨烯场效应晶体管（GFET）的方法。所需的石墨烯层通过无转移催化化学气相沉积（CCVD）工艺直接在二氧化硅上原位生长。根据工艺参数，单层、双层或多层石墨烯FET（GFET）的制造是可能的。通过SEM、TEM、TEM-晶格分析以及拉曼光谱对所制备的石墨烯层进行了表征。直接在生长之后，所制造的GFET是电功能性的，并且可以通过用作接触电极的催化剂金属进行电表征。与单层石墨烯FET相比，所制造的双层石墨烯FET（BiLGFET）表现出单极p型MOSFET行为。此外，所制造的BiLGFET在室温下的104至几个107的开/关电流比允许它们在数字逻辑应用中使用[1]。此外，GFET的稳定滞后使得它们能够用作存储器器件而不需要存储电容器，因此非常高的存储器器件密度是可能的。整个制造过程完全与Si-CMOS兼容，可以使用混合硅/石墨烯电子器件。
We invented a method to fabricate graphene field effect transistors (GFETs) on oxidized silicon wafers in a Silicon CMOS compatible process. The graphene layers needed are grown in situ by means of a transfer-free catalytic chemical vapor deposition (CCVD) process directly on silicon dioxide. Depending on the process parameters the fabrication of single, double or multi-layer graphene FETs (GFETs) is possible. The produced graphene layers have been characterized by SEM, TEM, TEM-lattice analysis as well as Raman-Spectroscopy. Directly after growth, the fabricated GFETs are electrically functional and can be electrically characterized via the catalyst metals which are used as contact electrodes. In contrast to monolayer graphene FETs, the fabricated bilayer graphene FETs (BiLGFETs) exhibit unipolar p-type MOSFET behavior. Furthermore, the on/off current-ratio of 104up to several 107at room temperature of the fabricated BiLGFETs allows their use in digital logic applications [1]. In addition, a stable hysteresis of the GFETs enables their use as memory devices without the need of storage capacitors and therefore very high memory device-densities are possible. The whole fabrication process is fully Si-CMOS compatible, enabling the use of hybrid silicon/graphene electronics.