MOCVD-derived multilayer Gd0.5Y0.5Ba2Cu3O7−δ films based on a novel heating method
MOCVD-derived multilayer Gd0.5Y0.5Ba2Cu3O7−δ films based on a novel heating method
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DOI：
10.1088/1361-6668/30/2/025023
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发表时间：
2017-02
影响因子：
3.6
通讯作者：
R. Zhao;Fei Zhang;Qing Liu;Yudong Xia;Yu-ming Lu;C. Cai;J. Xiong;B. Tao;Yanrong Li
中科院分区：
文献类型：
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作者：
R. Zhao;Fei Zhang;Qing Liu;Yudong Xia;Yu-ming Lu;C. Cai;J. Xiong;B. Tao;Yanrong Li
采用金属有机化学气相沉积（MOCVD）工艺在LaMnO 3/MgO/IBAD-MgO/溶液沉积平坦化-Y2 O3缓冲Hastelloy带材上制备了Gd0.5Y0.5Ba2Cu3O7−δ（GdYBCO）多层薄膜。在通过哈氏合金金属基底施加加热电流（Ih）之后，通过焦耳效应加热缓冲带。对于这种电流加热方法，加热能量从Hastelloy金属基底传递到氧化物缓冲层，从而在加热电流不变的情况下，带材的表面温度将随着沉积的GdYBCO膜的厚度的增加而下降。因此，采用了多层GdYBCO膜结构，其中针对每层调整Ih，以确保表面温度总是足够高以存款沉积纯c轴取向的GdYBCO膜。利用该方法，成功地制备了四层1000 nm厚的GdYBCO薄膜，临界电流（Ic）达到328 A cm−1宽度（77 K，0 T），对应的临界电流密度（Jc）为3.28 MA cm−2（77 K，0 T）。
Multilayer Gd0.5Y0.5Ba2Cu3O7−δ (GdYBCO) films have been deposited by the metal organic chemical vapor deposition process on LaMnO3/epitaxial MgO/ion beam assisted deposition (IBAD)-MgO/solution deposition planarization-Y2O3-buffered Hastelloy tapes. The buffered tapes were heated by the Joule effect after applying a heating current (Ih) through the Hastelloy metal substrates. For this kind of current heating method, the heating energy is transmitted from the Hastelloy metal substrate to the oxide buffer layers, thereby the surface temperature of the tape will decline with an increase in the thickness of the deposited GdYBCO film if the heating current is unchanged. Therefore, the multilayer GdYBCO film structure where Ih was adjusted for each layer was adopted to make sure that the surface temperature was always high enough to deposit purely c-axis oriented GdYBCO films. With this method, four-layer 1000 nm thick GdYBCO films were successfully prepared and the critical current (Ic) reached 328 A cm−1 width (77 K, 0 T), corresponding to the critical current density (Jc) of 3.28 MA cm−2 (77 K, 0 T).