HIGHLY CONDUCTIVE AND TRANSPARENT SILICON DOPED ZINC-OXIDE THIN-FILMS PREPARED BY RF MAGNETRON SPUTTERING
HIGHLY CONDUCTIVE AND TRANSPARENT SILICON DOPED ZINC-OXIDE THIN-FILMS PREPARED BY RF MAGNETRON SPUTTERING
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DOI：
10.1143/jjap.25.l776
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发表时间：
1986-09-01
期刊：
影响因子：
--
通讯作者：
TAKATA, S
中科院分区：
文献类型：
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作者：
MINAMI, T;SATO, H;TAKATA, S
采用射频磁控溅射法制备了高导电性、透明的掺硅氧化锌薄膜。在250℃以下的低温衬底上，可以制备出电阻率低至3.8× 10-4 Ω cm、可见光区平均透过率高于85%的薄膜。与未掺杂ZnO薄膜相比，掺硅ZnO薄膜在高温下的电阻率稳定性有很大提高。
Highly conductive and transparent films of Si-doped ZnO have been prepared by rf magnetron sputtering of a ZnO target with SiO 2 or SiO dopant added. Films with resistivity as low as 3.8× 10-4 Ω cm and average transmittance above 85% in the visible region can be produced on low temperture substrates at below 250 C. Great improvement in the stability of the resistivity for use at high temperatures was obtained for Si-doped ZnO films in comparison with undoped films.