Bulk transport measurements in ZnO: the effect of surface electron layers
Bulk transport measurements in ZnO: the effect of surface electron layers
复制标题
DOI：
10.1103/physrevb.81.075211
复制
发表时间：
2010-02
影响因子：
3.7
通讯作者：
M. Allen;C. Swartz;T. Myers;T. Veal;C. McConville;S. M. Durbin
中科院分区：
文献类型：
--
作者：
M. Allen;C. Swartz;T. Myers;T. Veal;C. McConville;S. M. Durbin
磁输运测量和X射线光电子能谱被用来研究ZnO的表面导电性。近表面向下的能带弯曲，与电子积累一致，被发现的极性和非极性面的散装ZnO单晶。观察到一个显着的极性效应，向下的带弯曲始终较强的Zn-极性面和较弱的O-极性面。表面电子积累层被发现显着影响高电阻率，水热生长的块状ZnO晶体在低于200 K的温度下的电性能，并在很大程度上是负责该材料的电子迁移率极低的报告。
Magnetotransport measurements and x-ray photoemission spectroscopy were used to investigate the surface conductivity of ZnO. Near-surface downward band bending, consistent with electron accumulation, was found on the polar and nonpolar faces of bulk ZnO single crystals. A significant polarity effect was observed in that the downward band bending was consistently stronger on the Zn-polar face and weaker on the O-polar face. The surface electron accumulation layer was found to significantly influence the electrical properties of high resistivity, hydrothermally grown bulk ZnO crystals at temperatures below 200 K, and is largely responsible for the anomalously low electron mobility reported for this material.