Control of magnetic-field effect on electroluminescence in Alq3-based organic light emitting diodes
Control of magnetic-field effect on electroluminescence in Alq3-based organic light emitting diodes
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DOI：
10.1063/1.2185256
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发表时间：
2006-03-20
影响因子：
4
通讯作者：
Tokura, Y
中科院分区：
文献类型：
--
作者：
Odaka, H;Okimoto, Y;Tokura, Y
研究了磁场对三-（8-羟基喹啉）铝（Alq（3））基有机电致发光（EL）的影响。在室温下，随着磁场增加到500 Oe，EL强度急剧增加，最高可达8%。磁场对EL的影响取决于空穴传输层和发光层之间的界面结构，表明界面处电子-空穴对的自旋态动力学的重要性。
The magnetic-field effect on electroluminescence (EL) has been investigated for the tris-(8-hydroxyquinolino) aluminum (Alq(3))-based organic light emitting diode. The EL intensity sharply increases up to 8% with increasing magnetic field to 500 Oe at room temperature. The magnetic field effect on EL depends on the interface structure between a hole transporting and a light emitting layers, indicating the importance of the spin-state dynamics of the electron-hole pairs at the interface.