Effect of amide bond in gate dielectric polymers on memory performance of organic field-effect transistors
Effect of amide bond in gate dielectric polymers on memory performance of organic field-effect transistors
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DOI：
10.7567/jjap.53.05hb13
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发表时间：
2013-07
影响因子：
1.5
通讯作者：
H. Sakai;H. Cheong;T. Kodzasa;H. Tokuhisa;K. Tokoro;M. Yoshida;Taihei Ikoga;Kazuki Nakamura;Norihisa Kobayashi;S. Uemura
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文献类型：
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作者：
H. Sakai;H. Cheong;T. Kodzasa;H. Tokuhisa;K. Tokoro;M. Yoshida;Taihei Ikoga;Kazuki Nakamura;Norihisa Kobayashi;S. Uemura
我们使用尼龙11、聚（γ-甲基-l-谷氨酸）（PMLG）和聚（ε-苄氧羰基-l-赖氨酸）[Plys（z）]作为栅极晶体管，展示了有机场效应晶体管（OFFET）。通过傅里叶变换红外光谱（FT-IR）测定，尼龙11的二级结构为β-折叠，而PMLG和Plys（z）的二级结构为α-螺旋。分别通过FT-IR和X射线衍射（XRD）测量确定PMLG和Plys（z）的α-螺旋取向及其结晶度。使用尼龙11的OFET在传输特性中没有表现出滞后（开/关比为1.2）。相比之下，使用PMLG和PLys（z）的OFFERS显示滞后，并且其作为铁电存储器操作（开/关比分别为2.2 × 104和53）。这种差异归因于二级结构和晶体系统的差异。使用PMLG和PLys（z）的OFFEX中的记忆保持性能表明，膜的高结晶度和高度有序的偶极子对于记忆保持不是必需的。
We demonstrated organic field-effect transistors (OFETs) using nylon 11, poly(γ-methyl-l-glutamate) (PMLG), and poly(ε-benzyloxycarbonyl-l-lysine) [Plys(z)] as gate dielectrics. By a Fourier-transform IR (FT-IR) measurement, the secondary structure of nylon 11 was determined to be a β-sheet, and those of PMLG and Plys(z) have an α-helix. The orientation of the α-helix of PMLG and Plys(z) and its crystallinity were determined by FT-IR and X-ray diffraction (XRD) measurements, respectively. The OFET using nylon 11 showed no hysteresis in the transfer characteristic (on/off ratio is 1.2). In contrast, OFETs using PMLG and PLys(z) showed hysteresis and it operated as ferroelectric memories (on/off ratios are 2.2 × 104 and 53, respectively). This difference is attributed to the difference in the secondary structure and the crystal system. The memory retention property in OFETs using PMLG and PLys(z) suggested that high crystallinity of the film and highly ordered dipoles are not necessary for the memory retention.