A route for bulk separation of semiconducting from metallic single-wall carbon nanotubes
A route for bulk separation of semiconducting from metallic single-wall carbon nanotubes
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DOI：
10.1021/ja028599l
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发表时间：
2003-03-19
影响因子：
15
通讯作者：
Papadimitrakopoulos, F
中科院分区：
文献类型：
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作者：
Chattopadhyay, D;Galeska, L;Papadimitrakopoulos, F
单壁碳纳米管（SWNTs）根据类型（金属与半导体）已经实现了HiPco和激光烧蚀SWNTs的实质性分离。我们目前认为，除了最初提出的两性离子模型外，十八烷基胺（ODA）在四氢呋喃（THF）中的稳定分散源于ODA沿着SWNT侧壁的物理吸附和组织。此外，据报道，与金属基团相比，胺基团对半导体SWNTs的亲和力有助于物理吸附ODA的额外稳定性。正如拉曼研究表明的那样，随着分散浓度的增加，这为金属swnt的选择性沉淀提供了一个场所。
Substantial separation of single-wall carbon nanotubes (SWNTs) according to type (metallic versus semiconducting) has been achieved for HiPco and laser-ablated SWNTs. We presently argue that stable dispersions of SWNTs with octadecylamine (ODA) in tetrahydrofuran (THF) originate from the physisorption and organization of ODA along the SWNT sidewalls in addition to the originally proposed zwitterion model. Furthermore, the reported affinity of amine groups for semiconducting SWNTs, as opposed to their metallic counterparts, contributes additional stability to the physisorbed ODA. This provides a venue for the selective precipitation of metallic SWNTs upon increasing dispersion concentration, as indicated by Raman investigations.