Effects of fluorine incorporation and forming gas annealing on high-k gated germanium metal-oxide-semiconductor with GeO2 surface passivation
Effects of fluorine incorporation and forming gas annealing on high-k gated germanium metal-oxide-semiconductor with GeO2 surface passivation
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DOI：
10.1063/1.2966367
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发表时间：
2008-08
影响因子：
4
通讯作者：
R. Xie;Wei He;Mingbin Yu;Chunxiang Zhu
中科院分区：
文献类型：
--
作者：
R. Xie;Wei He;Mingbin Yu;Chunxiang Zhu
有效的栅前表面钝化和栅后处理对于优化锗金属氧化物半导体（MOS）界面质量非常重要。在这项工作中，栅前GeO 2表面钝化和栅后处理，包括CF 4-等离子体处理和形成气体退火，使高品质的HfO 2栅锗MOS电容器。实现了具有可忽略的电容-电压延伸和频率分散的优异电气特性。TaN scinHfO 2 scinGeOx scinGe MOS结构的界面陷阱密度最小为2.02× 1011 cm-2 eV-1。与合成气退火相比，CF 4等离子体处理对钝化位于Ge带隙上半部分的界面态更有效。
Effective pregate surface passivation and postgate treatments are very important to optimize the germanium metal-oxide-semiconductor (MOS) interface quality. In this work, pregate GeO2 surface passivation and postgate treatments including CF4-plasma treatment and forming gas annealing are employed to make high quality HfO2 gated germanium MOS capacitors. Excellent electrical characteristics with negligible capacitance-voltage stretch-out and frequency dispersion are achieved. The interface trap density of TaN∕HfO2∕GeOx∕Ge MOS structure is as low as 2.02×1011cm−2eV−1 at the minimum. Comparing to the forming gas annealing, it is found that CF4-plasma treatment is more effective to passivate interface states located in the upper half of Ge bandgap.