Homoepitaxial diamond films codoped with phosphorus and nitrogen by chemical‐vapor deposition
Homoepitaxial diamond films codoped with phosphorus and nitrogen by chemical‐vapor deposition
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化学气相沉积磷氮共掺同质外延金刚石薄膜
DOI：
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发表时间：
1995
期刊：
影响因子：
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通讯作者：
P. Alkemade
中科院分区：
文献类型：
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作者：
G. Cao;F. A. J. M. Driessen;G. Bauhuis;L. Giling;P. Alkemade
采用热灯丝化学气相沉积法，以磷化氢和氮为掺杂源，在天然金刚石衬底上生长了磷氮共掺杂的同质外延金刚石薄膜。实验表明，氮的掺入提高了磷的掺入和膜的生长速率。前者是由于氮引起的局部晶格膨胀，而后者可以解释由氮或气体成分的变化在金刚石表面上诱导的缺陷。外延膜中磷和氮的最高浓度分别约为3×1019和6×1019原子/cm 3，通过二次离子质谱法测定;然而，这些外延层具有高电阻。此外，阴极射线发光和光致发光的研究表明，尽管各种发光特性有关的氮，没有迹象表明磷诱导发光被发现在红外可见光范围内。
Homoepitaxial diamond films codoped with phosphorus and nitrogen have been grown on natural diamond substrates using phosphine and nitrogen as doping sources by hot‐filament chemical‐vapor deposition. The experiments show that the incorporation of nitrogen enhances both the phosphorus incorporation and the film growth rate. The former is attributed to the local lattice dilatation caused by nitrogen, while the latter can be explained by defects induced on the surface of diamond by nitrogen or by a change in gaseous composition. The highest concentrations of phosphorus and nitrogen in the epitaxial films are approximately 3×1019 and 6×1019 atoms/cm3, respectively, determined by secondary‐ion‐mass spectrometry; however, these epilayers are highly resistive. Furthermore, cathodoluminescence and photoluminescence studies show that despite the variety of luminescence features related to nitrogen, no indication of phosphorus induced luminescence is found in the infrared to visible range.