Influence of the annealing and operating temperatures on the gas-sensing properties of rf sputtered WO3 thin-film sensors
Influence of the annealing and operating temperatures on the gas-sensing properties of rf sputtered WO3 thin-film sensors
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DOI：
10.1016/j.snb.2004.06.009
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发表时间：
2005-03
影响因子：
8.4
通讯作者：
M. Stankova;X. Vilanova;E. Llobet;J. Calderer;C. Bittencourt;J. Pireaux;X. Correig
中科院分区：
文献类型：
--
作者：
M. Stankova;X. Vilanova;E. Llobet;J. Calderer;C. Bittencourt;J. Pireaux;X. Correig
本文研究了用射频溅射法在硅衬底上沉积的WO 3薄膜的传感特性。沉积后，薄膜在干燥空气中进行退火处理，持续24小时。使用三种不同的退火温度（350、400和450°C）来分析该参数对传感器响应的影响。用原子力显微镜（AFM）和X射线光电子能谱（XPS）研究了薄膜的形貌和成分。发现膜基本上是不均匀的。活性层的氧-钨原子比表明，无论使用的退火温度如何，WO 3活性层接近其化学计量配方，尽管推断出在较高的退火温度下测试的氧原子有松动的趋势。在三种不同的工作温度（300、350和370°C）下研究了薄膜对氨、二氧化氮、乙醇、苯、甲烷和一氧化碳的敏感性。通过选择适当的退火和操作温度，发现可以在乙醇和氨的存在下选择性地检测二氧化氮，或者在乙醇的存在下检测氨。
The sensing properties of WO3thin films deposited by rf sputtering onto silicon substrates have been investigated. After deposition, the films underwent an annealing process in dry air that lasted 24h. Three different annealing temperatures (350, 400 and 450°C) were used to analyze the influence of this parameter on the sensor response. The morphology and composition of the films were studied by AFM and XPS. The films were found to be essentially inhomogeneous. The oxygen-to-tungsten atomic ratio of the active layers reveals that, irrespective to the annealing temperature used, the WO3active layers were close to their stoichiometric formulation, although a tendency to loose oxygen atoms at the higher annealing temperatures tested was inferred. The sensitivity of the films to ammonia, nitrogen dioxide, ethanol, benzene, methane and carbon monoxide was studied at three different operating temperatures (300, 350 and 370°C). By selecting the appropriate annealing and operating temperatures, it was found possible to selectively detect nitrogen dioxide in the presence of ethanol and ammonia, or to detect ammonia in the presence of ethanol.