Room-temperature charge stability modulated by quantum effects in a nanoscale silicon island.
Room-temperature charge stability modulated by quantum effects in a nanoscale silicon island.
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DOI：
10.1021/nl1044692
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发表时间：
2011-03
期刊：
影响因子：
10.8
通讯作者：
S. J. Shin;J. J. Lee-J.;H. J. Kang;J. Choi;S. Yang;Yasuo Takahashi;D. Hasko
中科院分区：
文献类型：
--
作者：
S. J. Shin;J. J. Lee-J.;H. J. Kang;J. Choi;S. Yang;Yasuo Takahashi;D. Hasko
我们报道了在室温下工作的具有亚5纳米硅岛的超小型库仑阻断装置上进行的输运测量。在300K时，电荷稳定性表现出每个连续的库仑金刚石的斜率和对角线尺寸都有很大的变化，但显著的是，即使在低至5.3K时，除了额外的库仑峰分裂外，其主要特征仍然存在。通过引入库仑相互作用、谷分裂和强量子约束之间的相互作用，成功地模拟了具有额外库仑峰精细结构的电荷稳定性的这一关键特征，这种相互作用导致每个点占用产生几个低能多体激发态。这些激发态在亚5 nm的超小尺度下得到增强，甚至在300K时以团簇的形式持续存在，导致电荷稳定性的实质性调制。
We report on transport measurement performed on a room-temperature-operating ultrasmall Coulomb blockade devices with a silicon island of sub5 nm. The charge stability at 300K exhibits a substantial change in slopes and diagonal size of each successive Coulomb diamond, but remarkably its main feature persists even at low temperature down to 5.3K except for additional Coulomb peak splitting. This key feature of charge stability with additional fine structures of Coulomb peaks are successfully modeled by including the interplay between Coulomb interaction, valley splitting, and strong quantum confinement, which leads to several low-energy many-body excited states for each dot occupancy. These excited states become enhanced in the sub5 nm ultrasmall scale and persist even at 300K in the form of cluster, leading to the substantial modulation of charge stability.