Analysis of optical gain and threshold current density of wurtzite InGaN/GaN/AlGaN quantum well lasers
Analysis of optical gain and threshold current density of wurtzite InGaN/GaN/AlGaN quantum well lasers
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DOI：
10.1063/1.368338
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发表时间：
1998-09
影响因子：
3.2
通讯作者：
Y. Yeo;T. Chong;Ming-Fu Li;W. Fan
中科院分区：
文献类型：
--
作者：
Y. Yeo;T. Chong;Ming-Fu Li;W. Fan
用数值方法研究了纤锌矿结构InxGa 1 −xN/GaN量子威尔斯阱（QW）的价带结构、态密度和光学增益.我们使用的有效质量参数的GaN和InN使用的经验赝势方法。通过改变阱宽和In在阱材料中的摩尔分数，研究了量子限制和压缩应变的影响。阱宽越窄，阱中In的摩尔分数越高，光增益的横向电增强和横向磁抑制越明显。从光增益和辐射电流密度的关系，我们得到了一个单一的量子阱的透明电流密度为200 A/cm 2。分析了InGaN/GaN/AlGaN分别限制异质结多量子阱（MQW）激光器结构。结果表明，在优化这种多量子阱激光器的阈值电流密度时，应选择合适的阱宽和量子阱数目的组合。
The valence subband structures, density-of-states, and optical gain of (0001) wurtzite InxGa1−xN/GaN quantum wells (QWs) are studied using a numerical approach. We used the effective-mass parameters of GaN and InN derived using the empirical pseudopotential method. By varying the well width and mole fraction of In in the well material, the effects of quantum confinement and compressive strain are examined. A narrower well width and a higher In mole fraction in the well lead to transverse electric enhancement and transverse magnetic suppression of the optical gain. From the relationship between the optical gain and the radiative current density, we obtain the transparent current density for a single QW to be 200 A/cm2. The InGaN/GaN/AlGaN separate confinement heterostructure multiple QW (MQW) laser structure is then analyzed. It is shown that a suitable combination of well width and number of QWs should be selected in optimizing the threshold current density in such MQW lasers.