Dislocation distributions and tilts in Al(Ga)InAs reverse-graded layers grown on misorientated GaAs substrates
Dislocation distributions and tilts in Al(Ga)InAs reverse-graded layers grown on misorientated GaAs substrates
复制标题
在定向错误的 GaAs 衬底上生长的 Al(Ga)InAs 逆渐变层中的位错分布和倾斜
DOI：
10.1088/1674-1056/26/3/038102
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
Jianrong Dong
中科院分区：
文献类型：
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作者：
Yang He;Yurun Sun;Yongming Zhao;Shuzhen Yu;Jianrong Dong
采用金属有机物化学气相沉积（MOCVD）方法在（001）GaAs衬底上生长了Al（Ga）InxAs（x = 0.05-0.52）缓冲层和InP层。外延层的位错分布和倾斜
Compositionally undulating step-graded Al(Ga)InxAs (x = 0.05–0.52) buffers with the following InP layer were grown by metal–organic chemical vapor deposition (MOCVD) on (001) GaAs with a 15° miscut. The dislocation distribution and tilts of the epilayers