Magnetic properties of n-GaMnN thin films
Magnetic properties of n-GaMnN thin films
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DOI：
10.1063/1.1481533
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发表时间：
2002-05
影响因子：
4
通讯作者：
G. Thaler;M. Overberg;B. Gila;R. M. Frazier;C. Abernathy;S. Pearton;J. Lee;See‐Hyung Lee;Y. Park;Z. Khim;J. Kim;F. Ren
中科院分区：
文献类型：
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作者：
G. Thaler;M. Overberg;B. Gila;R. M. Frazier;C. Abernathy;S. Pearton;J. Lee;See‐Hyung Lee;Y. Park;Z. Khim;J. Kim;F. Ren
采用气体源分子束外延技术制备了GaMnN薄膜。Mn浓度在3和12原子之间。%进行了调查。通过粉末X射线衍射或高分辨率横截面透射电子显微镜观察，在9%或更少的Mn的膜中没有第二相形成的证据。通过电容-电压或霍尔分析确定膜为n型。使用鱿鱼磁强计进行的磁性表征表明，在室温下的铁磁有序的所有样品的证据。与理论预测相一致，具有3% Mn的材料显示出每个Mn原子的最高有序度。在320 K时，样品显示出非零磁化强度，表明TC高于室温。
GaMnN thin films were synthesized using gas-source molecular-beam epitaxy. Mn concentrations between 3 and 12 at. % were investigated. No evidence of second-phase formation was observed by powder x-ray diffraction or high-resolution cross section transmission electron microscopy in films with 9% or less Mn. The films were n type as determined by capacitance–voltage or Hall analysis. Magnetic characterization performed using a squid magnetometer showed evidence of ferromagnetic ordering at room temperature for all samples. In agreement with theoretical predictions, material with 3% Mn showed the highest degree of ordering per Mn atom. At 320 K, the samples show a nonzero magnetization indicating a TC above room temperature.