Two-photon absorption from single InGaN/GaN quantum dots
Two-photon absorption from single InGaN/GaN quantum dots
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DOI：
10.1016/j.physe.2005.12.022
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发表时间：
2006-05-01
影响因子：
3.3
通讯作者：
Watson, IM
中科院分区：
文献类型：
--
作者：
Jarjour, AF;Green, AM;Watson, IM
利用双光子光谱技术研究了InGaN/GaN单量子点的时间积分和时间分辨光致发光特性。两个样品含有不同的生长技术产生的量子点进行了检查。我们发现，双光子激发的结果在抑制的发射从下面的量子阱的量子点耦合，但相对较强的量子点发射观察。这种效应可以用量子点中载流子的完全限制增强双光子吸收来解释。此外，从研究中提出的双光子光致发光激发光谱中揭示了激发态存在的证据。(c)2006 Elsevier B. V.保留所有权利。
We present a study of the time-integrated and time-resolved photo luminescence properties of single-InGaN/GaN quantum dots (QDs) using two-photon spectroscopy. Two samples containing QDs produced by different growth techniques are examined. We find that two-photon excitation results in the suppression of the emission from the underlying quantum well to which the QDs are coupled and yet relatively strong QD emission is observed. This effect is explained in terms of the enhancement of two-photon absorption in QDs due to the full confinement of carriers. Furthermore, evidence of the presence of excited states is revealed from the two-photon photoluminescence excitation spectra presented in the study. (c) 2006 Elsevier B.V. All rights reserved.