Novel global planarization technology for interlayer dielectrics using spin on glass film transfer and hot pressing
Novel global planarization technology for interlayer dielectrics using spin on glass film transfer and hot pressing
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使用旋涂玻璃薄膜转移和热压的新型层间电介质全局平坦化技术
DOI：
10.1116/1.590014
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
A. Nakashima
中科院分区：
文献类型：
--
作者：
K. Machida;H. Kyuragi;H. Akiya;K. Imai;A. Tounai;A. Nakashima
提出了一种基于自旋玻璃(SOG)薄膜转移和热压技术的层间介质整体平坦化技术。这项技术主要包括预先在薄片上涂覆一层SOG薄膜，然后通过在真空中对其进行压制和加热将其从薄片薄膜转移到硅衬底上。通过该工艺可以实现层间介质的平坦化和填充。在这项技术中，使用了过氢硅氮烷作为SOG材料，过氢硅氮烷在涂覆过程中对厚层具有高粘度，在加热时对流动具有低粘度。实验结果表明，通过挤压和加热工艺可以减小SOG的厚度，通过施加压力可以改善SOG的均匀性。将该技术应用于铝互连，可以完全实现平面化和填充。因此，这项技术对于简单而廉价的全球平面化是非常有前途的。
Global planarization technology based on a new concept comprised of spin on glass (SOG) film transfer and hot pressing is proposed for interlayer dielectrics. The technology basically involves coating a SOG film onto a sheet film in advance and then transferring it from the sheet film to a Si substrate by pressing and heating it in a vacuum. Planarization and filling of the interlayer dielectrics can be carried out by this process. For this technology, perhydrosilazane, which has a high viscosity for a thick formation during coating and a low viscosity for the flow during heating, is used as the SOG material. Experimental results show that the SOG thickness is reduced by the pressing and heating process and that its uniformity can be improved by the press force. By applying this technology to Al interconnection, it is found that planarization and filling can be completely realized. Therefore, this technology is very promising for simple and inexpensive global planarization.