Growth Mode and Characteristics of the O2-Oxidized Si(100) Surface Oxide Layer Observed by Real Time Photoemission Measurement
Growth Mode and Characteristics of the O2-Oxidized Si(100) Surface Oxide Layer Observed by Real Time Photoemission Measurement
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实时光电发射测量观察O2氧化Si(100)表面氧化层的生长模式和特性
DOI：
10.1143/jjap.37.261
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
H. Kato
中科院分区：
文献类型：
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作者：
Youichi Takegawa;Y. Enta;M. Suemitsu;N. Miyamoto;H. Kato
在 350–730°C 的衬底温度 (Ts) 和 3×10-7–1×10-5 Torr 的 O2 压力下，通过实时紫外和同步辐射光电子能谱研究了使用氧气对 Si(100)2×1 表面进行的初始热氧化。当Ts低于600°C时，氧化按照Langmuir型吸附模式进行，而当Ts高于700°C时，则表现为二维岛生长模式。两个温度区域之间生长的氧化物的特性也有所不同：与低温区域中生长的氧化物相比，在高温区域中生长的氧化物表现出更粗糙的氧化物/Si界面以及针对热分解的更高的热稳定性。两个温度区域之间氧化模式和膜特性的这些差异可以根据高温区域中同时存在氧化物分解来理解。
The initial thermal oxidation on Si(100)2×1 surfaces using oxygen have been investigated with real-time ultraviolet and synchrotron-radiation photoelectron spectroscopies at substrate temperatures (Ts) of 350–730°C and at O2 pressures of 3×10-7–1×10-5 Torr. At Ts below 600°C, the oxidation proceeded following a Langmuir-type adsorption mode, while at Ts above 700°C it indicated a two-dimensional island growth mode. The characteristics of the grown oxide also differ between the two temperature regions: the oxide grown in the high temperature region shows a rougher oxide/Si interface as well as a higher thermal stability against thermal decomposition as compared to the one grown in the low temperature region. These differences in the oxidation mode and the film characteristics between the two temperature regions are understood in terms of the presence of simultaneous oxide decomposition in the high temperature region.