Formation of two-dimensional electron gas and the magnetotransport behavior of ZnMnO/ZnO heterostructure
Formation of two-dimensional electron gas and the magnetotransport behavior of ZnMnO/ZnO heterostructure
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DOI：
10.1063/1.1558612
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发表时间：
2003-05
影响因子：
3.2
通讯作者：
T. Edahiro;N. Fujimura;T. Ito
中科院分区：
文献类型：
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作者：
T. Edahiro;N. Fujimura;T. Ito
采用脉冲激光沉积法在c切蓝宝石衬底上生长了ZnO基异质结，其阻挡层中含有磁性杂质。Zn0.9Mn0.1O/ZnO异质结迁移率的温度依赖性表明，在100 K以下，离子化杂质散射受到抑制。在1.85K下测得的载流子浓度和迁移率分别为4.0× 10 ~（12）l/cm ~ 2和360 cm ~ 2/Vs。在相同温度下，在3.7 T以上的纵向磁电阻中观察到明显的Shubnikov-de哈斯振荡。这些输运性质表明，在Zn0.9Mn0.1O/ZnO界面处成功地获得了二维电子气。
ZnO based heterostructure, which contains magnetic impurities in the barrier layer, is grown on c-cut sapphire substrate by pulsed laser deposition. The temperature dependence of the mobility of the Zn0.9Mn0.1O/ZnO heterostructure exhibits the suppression of ionized impurity scattering below 100 K. The carrier concentration and the mobility measured at 1.85 K are 4.0×1012 l/cm2 and 360 cm2/V s. Shubnikov–de Haas oscillations are clearly observed in longitudinal magnetoresistance above 3.7 T at the same temperature. These transport properties reveal that two-dimensional electron gas is successfully obtained at the Zn0.9Mn0.1O/ZnO interface.