Breaking of Silicon Wafer by Irradiation of YAG Laser
Breaking of Silicon Wafer by Irradiation of YAG Laser
复制标题
YAG 激光照射对硅片的断裂
DOI：
10.2472/jsms.44.159
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
H. Nagai
中科院分区：
文献类型：
--
作者：
T. Kurobe;K. Ichikawa;H. Nagai
硅片等脆性材料的切割通常采用金刚石划线器或金刚石薄刀轮进行。据称，使用刀片对硅片进行机械切割会导致切割质量较低。最近，人们正在热烈研究使用 CO2 激光器的非接触式切割方法。然而，硅晶片的精确破碎尚未实现。研究了在室温下、研磨表面水冷下用 YAG 激光器破碎硅片的情况。实验发现，硅片的破裂是通过裂纹萌生和扩展两个阶段发生的。主裂纹蜿蜒并伴有一些分支裂纹，降低了硅片的断裂质量。断裂模式很大程度上取决于激光功率、工作台进给速率和冷却条件。
Cutting of brittle materials such as silicon wafer is usually made with a diamond scriber or a diamond thin blade wheel. It is said that the mechanical cutting of silicon wafer using the blade leads to lower cutting quality. A non-contacting cutting method using a CO2 laser is recently being studied enthusiastically. Precision breaking of silicon wafer, however, has not been made. Breaking of silicon wafer with a YAG laser was studied at room temperature under water cooling of lapping surface. It was found from the experiments that the breaking of silicon wafer occurred through two stages of crack initiation and propagation. Meandering of the main crack is accompanied with some branching cracks which deteriolate the breaking quality of silicon wafer. Breaking mode is dependent strongly upon laser power, table feed rate and cooling condition.