Formation of Amorphous Silicon by the Low-Temperature Tunneling Reaction of H Atoms with Solid Thin Film of SiH4at 10 K
Formation of Amorphous Silicon by the Low-Temperature Tunneling Reaction of H Atoms with Solid Thin Film of SiH4at 10 K
复制标题
10 K 下 H 原子与 SiH4 固体薄膜的低温隧道反应形成非晶硅
DOI：
10.1021/jp010553b
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发表时间：
2001
影响因子：
3.3
通讯作者：
Shinichi Kitagawa
中科院分区：
文献类型：
--
作者：
K. Hiraoka;Tetsuya Sato;Shoji Sato;S. Hishiki;Katsunori Suzuki;Y. Takahashi;Tatsuya Yokoyama;Shinichi Kitagawa
H原子与沉积在硅衬底上的sih4分子在10k下发生反应，形成si2h6作为中间产物和薄固体产物。在50 ~ 10K温度范围内，反应产物的产率随温度的降低而增加。在10 K时，sih4的膜厚约为10−20层，固体产物收率最高。当在10k形成的固体产物在200k下与H原子进一步反应时，观察到Si - Si键网络的生长。利用红外光谱和椭偏光谱对固体产物进行分析，发现其结构类似于等离子体化学气相沉积形成的非晶硅（a-Si:H）。
The reaction of H atoms with SiH4molecules deposited on the silicon substrate at 10 K led to the formation of Si2H6as an intermediate and a thin solid product. The yields of reaction products increased with decrease of temperature from 50 to 10K. The film thickness of about 10−20 monolayers of SiH4gave the highest yield of the solid product at 10 K. When the solid product formed at 10 K was further reacted with H atoms at 200 K, the growth of Si−Si bond network was observed. Analysis of the solid product by FT-IR and spectroscopic ellipsometry revealed that it has the structure similar to amorphous silicon (a-Si:H) formed by the plasma chemical vapor deposition.