Structural Analysis of 6H–SiC(0001)√3×√3 Reconstructed Surface
Structural Analysis of 6H–SiC(0001)√3×√3 Reconstructed Surface
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6H–SiC(0001)√3×√3重构表面的结构分析
DOI：
10.1143/jjap.39.6410
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
K. Oura
中科院分区：
文献类型：
--
作者：
Toshiaki Fujino;T. Fuse;Jeong;Katsuhiko Inudzuka;Y. Yamazaki;M. Katayama;K. Oura
利用同轴碰撞离子散射谱（CAICISS）研究了6 H-SiC（0001）SiO 3× SiO 3重构表面的结构。作为组成分析的结果，发现该表面的最上层被Si吸附原子覆盖。此外，从入射角的散射强度的依赖性，由于C原子，它被发现，133 × 133的周期性是由一个单层的Si吸附原子占据T4位，和Si吸附原子从第一基板层的高度被确定为1.5±0.2 μ m。
Using coaxial impact-collision ion scattering spectroscopy (CAICISS), the structure of the 6H–SiC(0001)√3×√3 reconstructed surface was investigated. As a result of composition analysis, the topmost layer of this surface was found to be covered with Si adatoms. Moreover, from the incidence angle dependence of the scattering intensity due to C atoms, it was found that the √3×√3 periodicity was formed by a one-third monolayer of Si adatoms occupying T4 sites, and the height of the Si adatoms from the first substrate layer was determined to be 1.5±0.2 Å.