Spin transistor based on double tunnel junctions using half-metallic Co2MnSi electrodes
Spin transistor based on double tunnel junctions using half-metallic Co2MnSi electrodes
复制标题
DOI：
10.1088/1742-6596/200/5/052019
复制
发表时间：
2010
期刊：
影响因子：
--
通讯作者：
Y. Ohdaira;M. Oogane;H. Naganuma;Y. Ando
中科院分区：
文献类型：
--
作者：
Y. Ohdaira;M. Oogane;H. Naganuma;Y. Ando
采用半金属Heusler合金Co2MnSi电极的磁性隧道结（MTJ）具有较大的隧道磁电阻（TMR）比和较大的隧道电导偏压依赖性。我们提出了一种自旋晶体管利用半金属特性的Co2MnSi。基本结构是使用Co2MnSi电极和栅电极的双隧道结。器件的隧道电导随偏压的变化表现出Co_2MnSi电极的半金属特性。TMR比随着栅极电压的增加而减小。这是通过在使用Co2MnSi的自旋晶体管中施加外部电压来调制隧道电导的第一次观察。
Magnetic tunnel junctions (MTJs) using half-metallic Heusler alloy Co2MnSi electrodes show large tunnel magnetoresistance (TMR) ratio and large bias voltage dependence of tunnel conductance. We propose a spin transistor utilizing half-metallic characteristics of Co2MnSi. Fundamental structure is double tunnel junctions using Co2MnSi electrodes with gate electrode. The bias voltage dependence of tunnel conductance for the fabricated device has shown half-metallic characteristic of Co2MnSi electrodes. The TMR ratio has decreased with increasing gate voltage. This is the first observation of modulating the tunnel conductance by applying an external voltage in spin transistor using Co2MnSi.