Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures
Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures
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基于全氧化物异质结构的热稳定透明阻变存储器
DOI：
10.1002/adfm.201303274
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发表时间：
2014-04-01
影响因子：
19
通讯作者：
Li, Run-Wei
中科院分区：
文献类型：
--
作者：
Shang, Jie;Liu, Gang;Li, Run-Wei
本工作制作了一种基于氧化铪（HfOx）存储层和氧化铟锡（ITO）电极的全氧化物透明阻变存储器（T-RRAM）器件。该存储器件不仅表现出良好的光学透射率，而且还表现出无成形的双极阻变行为，室温R-OFF/R-ON比为45，约5 × 10（7）次循环的优异耐久性和超过10（6）s的长保持时间。更重要的是，HfOx基RRAM在10 K到490 K的宽温度范围内具有很强的抗热冲击能力，并且在极端工作条件下可以很好地保持接近40的高R-OFF/R-ON比。混合结构氧化铪膜中的强金属富导电细丝的场致电化学形成和断裂被发现是T-RRAM器件的优异电阻切换的原因。目前的全氧化物器件在未来的热稳定透明电子应用中具有很大的潜力。
An all-oxide transparent resistive random access memory (T-RRAM) device based on hafnium oxide (HfOx) storage layer and indium-tin oxide (ITO) electrodes is fabricated in this work. The memory device demonstrates not only good optical transmittance but also a forming-free bipolar resistive switching behavior with room-temperature R-OFF/R-ON ratio of 45, excellent endurance of approximate to 5 x 10(7) cycles and long retention time over 10(6) s. More importantly, the HfOx based RRAM carries great ability of anti-thermal shock over a wide temperature range of 10 K to 490 K, and the high R-OFF/R-ON ratio of approximate to 40 can be well maintained under extreme working conditions. The field-induced electrochemical formation and rupture of the robust metal-rich conductive filaments in the mixed-structure hafnium oxide film are found to be responsible for the excellent resistance switching of the T-RRAM devices. The present all-oxide devices are of great potential for future thermally stable transparent electronic applications.