High Efficiency Operation of Membrane Distributed-Reflector Lasers on Silicon Substrate
High Efficiency Operation of Membrane Distributed-Reflector Lasers on Silicon Substrate
复制标题
硅衬底上膜分布反射器激光器的高效运行
DOI:
10.1109/jstqe.2017.2704289
复制
发表时间:
2017
影响因子:
4.9
通讯作者:
Shigehisa Arai
中科院分区:
文献类型:
--
作者:
Takuo Hiratani;Daisuke Inoue;Takahiro Tomiyasu;Kai Fukuda;Tomohiro Amemiya;Nobuhiko Nishiyama;Shigehisa Arai
To advance on-chip optical interconnections, membrane distributed-reflector (DR) lasers with low threshold current and high-efficiency operation at one side output were realized. First, a membrane distributed Bragg reflector (DBR) laser with 80-μm-long active section and 50-μm-long DBR section was fabricated to clarify the DBR reflectivity. An external differential quantum efficiency of 35% for the output from the front facet was obtained, and the DBR reflectivity was estimated to be 75%. Next, a membrane DR laser with 61- μm-long distributed feedback section and 50-μm-long DBR section was fabricated. A threshold current of 0.48 mA, external differential quantum efficiency from the front side waveguide of 26%, and light output ratio from the front to the rear sides of 13 were obtained. The lasing spectrum showed a single-mode operation with a side-mode suppression-ratio (SMSR) of 40 dB. Finally, small-signal direct modulation was carried out and a modulation current efficiency factor of 7.9 GHz/mA1/2and 7 GHz/mA1/2were, respectively, obtained for the 30-μm-long and 61-μm-long devices.