Electrodeposition of Si Thin Film in a Hydrophobic Room-Temperature Molten Salt
Electrodeposition of Si Thin Film in a Hydrophobic Room-Temperature Molten Salt
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DOI：
10.1149/1.2952190
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发表时间：
2008-09
影响因子：
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通讯作者：
Yusaku F. Nishimura;Y. Fukunaka;T. Nishida;T. Nohira;R. Hagiwara
中科院分区：
文献类型：
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作者：
Yusaku F. Nishimura;Y. Fukunaka;T. Nishida;T. Nohira;R. Hagiwara
研究了在含有0.1 mol L -1 sicl4的三甲基-正己基二（三氟甲基磺酰基）亚胺中电沉积Si的可能方法。循环伏安法表明sicl4在-2.0 V左右会被还原成Si。在此电位下的恒电位电解在镍衬底上形成黄褐色薄膜。x射线光电子能谱和拉曼光谱结果表明，电沉积膜中含有非晶态硅。通过扫描电镜观察和能量色散x射线能谱分析也发现，电沉积初期可以获得高度均匀致密的薄膜，随着电解的进行，电沉积的Si膜变得更粗糙、更厚。
A possible way to electrodeposit Si has been studied in trimethyl-n-hexylammonium bis(trifluoromethylsulfonyl)imide containing 0.1 mol L -1 SiCl 4 . Cyclic voltammetry suggests that SiCl 4 should be reduced to form Si at around -2.0 V. Potentiostatic electrolysis at this potential forms a yellowish-brown film on a Ni substrate. X-ray photoelectron spectroscopy and Raman spectroscopy reveal that the electrodeposited film contains amorphous Si. It is also found from scanning electron microscopy observation and energy-dispersive X-ray spectroscopy analysis that a highly uniform and dense thin film can be obtained in the initial stage of electrodeposition and that the electrodeposited Si film becomes rougher and thicker with the progress of electrolysis.