Leveraging Voltage-Controlled Magnetic Anisotropy to Solve Sneak Path Issues in Crossbar Arrays
Leveraging Voltage-Controlled Magnetic Anisotropy to Solve Sneak Path Issues in Crossbar Arrays
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DOI：
10.1109/ted.2023.3246949
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发表时间：
2022-09
影响因子：
3.1
通讯作者：
Kezhou Yang;Abhronil Sengupta
中科院分区：
文献类型：
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作者：
Kezhou Yang;Abhronil Sengupta
In crossbar array structures, which serves as an “in-memory” compute engine for artificial intelligence (AI) hardware, write sneak path problem causes undesired switching of devices that degrades network accuracy. While custom crossbar programming schemes have been proposed, device-level innovations leveraging nonlinear switching characteristics of the cross-point devices are still under exploration to improve the energy eff iciency of the write process. In this work, a提出了基于磁性隧道连接（MTJ）的旋转装置设计，该设计提出了电压控制的磁各向异性（VCMA）效应，以解决写入偷偷摸摸的路径问题。
In crossbar array structures, which serves as an “in-memory” compute engine for artificial intelligence (AI) hardware, write sneak path problem causes undesired switching of devices that degrades network accuracy. While custom crossbar programming schemes have been proposed, device-level innovations leveraging nonlinear switching characteristics of the cross-point devices are still under exploration to improve the energy eff iciency of the write process. In this work, a spintronic device design based on magnetic tunnel junction (MTJ) exploiting the use of voltage-controlled magnetic anisotropy (VCMA) effect is proposed as a solution to the write sneak path problem. In addition, insights are provided regarding appropriate operating voltage conditions to preserve the robustness of the magnetization trajectory during switching, which is critical for proper switching probability manipulation.