An optical characterization of native oxides and thin thermal oxides on silicon
An optical characterization of native oxides and thin thermal oxides on silicon
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硅上自然氧化物和薄热氧化物的光学表征
DOI：
10.1063/1.331401
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发表时间：
1982
影响因子：
3.2
通讯作者：
E. Taft
中科院分区：
文献类型：
--
作者：
H. Philipp;E. Taft
利用真空紫外反射光谱法对硅上的天然氧化物和薄热氧化物进行了表征。利用已知的光学数据，计算了0-50 A厚的非晶SiO2、SiO x（x ~ 1.5）、SiO和Si在晶体Si衬底上的光子能量范围为8.5-12 eV的反射率。将天然氧化物生长和薄热氧化物的反射率数据与椭偏测量层厚度计算的曲线进行了比较。天然氧化物含有很少（如果有的话）SiO2，但可以拟合到SiO或复合SiO - SiOX层的曲线上，而热氧化物基本上都是SiO2，不包括Si和SiO2之间可能存在的厚度为5 a的薄界面层。真空紫外光谱技术清楚地描绘了SiO2与其他硅氧材料（如SiOX和SiO）的区别，能够非常精确地表征这些层。
Vacuum ultraviolet reflectance spectroscopy is used to characterize native oxides and thin thermal oxides on silicon. The reflectance of 0–50 A thick layers of noncrystalline SiO2,SiO x(X∼1.5), SiO, and Si on crystalline Si substrates are calculated for the photon energy range 8.5–12 eV using known optical data for these materials. Reflectance data for native oxide growths and thin thermal oxides are compared to these curves calculated for the ellipsometrically measured layer thickness. Native oxides contain little, if any, SiO2 but can be fitted to curves for SiO or composite SiO‐SiOX layers while thermal oxides are essentially all SiO2 exclusive of a thin interfacial layer ∼5 A in thickness which may exist between Si and SiO2. The technique of vacuum ultraviolet spectroscopy which clearly delineates SiO2 from other silicon‐oxygen materials such as SiOX and SiO is capable of extreme precision in the characterization of these layers.