Self-Driven Photodetector and Ambipolar Transistor in Atomically Thin GaTe-MoS2 p-n vdW Heterostructure
Self-Driven Photodetector and Ambipolar Transistor in Atomically Thin GaTe-MoS2 p-n vdW Heterostructure
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原子薄 GaTe-MoS2 p-n vdW 异质结构中的自驱动光电探测器和双极晶体管
DOI：
10.1021/acsami.5b10001
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发表时间：
2016-02-03
影响因子：
9.5
通讯作者：
Tongay, Sefaattin
中科院分区：
文献类型：
--
作者：
Yang, Shengxue;Wang, Cong;Tongay, Sefaattin
原子级薄二维材料的异质结构工程为制造高度可调谐电子和光电器件的原子级锐利界面提供了令人兴奋的机会。在这里，我们展示了两种完全不同的材料系统（即 GaTe-MoS2 p-n 异质结晶体管）之间的突变界面，所得器件具有独特的电子特性和自驱动光电特性。制造的异质结构晶体管表现出正向偏置整流行为，其中传输是双极的，电子和空穴载流子都对整体传输做出贡献。在光照下，光激发电子空穴对很容易被 GaTe-MoS2 界面处形成的大内建电势分开，从而有效地在内部产生自驱动光电流
Heterostructure engineering of atomically thin two-dimensional materials offers an exciting opportunity to fabricate atomically sharp interfaces for highly tunable electronic and optoelectronic devices. Here, we demonstrate abrupt interface between two completely dissimilar material systems, i.e, GaTe-MoS2 p-n heterojunction transistors, where the resulting device possesses unique electronic properties and self-driven photoelectric characteristics. Fabricated heterostructure transistors exhibit forward biased rectifying behavior where the transport is ambipolar with both electron and hole carriers contributing to the overall transport. Under illumination, photoexcited electronhole pairs are readily separated by large built-in potential formed at the GaTe-MoS2 interface efficiently generating self-driven photocurrent within